HYB 3164160AT-40

Operating temperature range.............................................................................................0 to 70
Storage temperature range......................................................................................... 55 to 150
Input/output voltage.................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation..................................................................................................................... 1.3 W
Data out current (short circuit).................................................................................................. 50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.

This device HYB 3164160AT-40 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on an advanced second generation 64Mbit 0,35mm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)160AT to be packaged in a 400 mil wide TSOP-50 package. These packages HYB 3164160AT-40 provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB3164(5/6)160ATL parts (L-version) have a very low power „sleep mode" supported by Self Refresh.