HYB 314405BJ-70

Features:

* 1 048 576 words by 4-bit organization
* 0 to 70 ?C operating temperature
* Hyper Page Mode - EDO
* Single + 3.3 V (± 0.3 V) supply
* Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
* Standby power dissipation:
7.2 mW  max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
720 W max. standby (LVCMOS) for Low Power Version
* Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,hidden refresh  and test mode capability
* All inputs and outputs LVTTL compatible
* 1024 refresh cycles / 16 ms
* 1024 refresh cycles / 128 ms for Low Power Version
* Plastic Packages: P-SOJ-26/20-5  with 300 mil width


Pinout




Specifications

Operating temperature range .......................................................0 to 70
Storage temperature range................................................ 55 to + 150
Input/output voltage.............................................................. 1 to + 4.6 V
Power Supply voltage............................................................. 1 to + 4.6 V
Data out current (short circuit).............................................................50 mA


Description

The HYB 314405BJ-70 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314405BJ-70 to be packed in a standard plastic P-SOJ-26/20 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.