HYB 314400BJ-50

Features:

* 1 048 576 words by 4-bit organization
* 0 to 70 C operating temperature
* Fast Page Mode Operation
* Fast access and cycle time
Single + 3.3 V ( 0.3 V) supply with a built-in VBB generator
* Low power dissipation
max. 252 mWactive (-50 version)
max. 216 mWactive (-60 version)
* Standby power dissipation:
7.2 mW max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
* Output unlatched at cycle end allows two-dimensional chip selection
* Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,hidden refresh and test mode capability
* All inputs and outputs LVTTL-compatible
* 1024 refresh cycles / 16 ms
* Plastic Packages: P-SOJ-26/20-2 with 300 mil width


Pinout




Specifications

Operating temperature range ............................................................. 0 to 70
Storage temperature range.....................................................  55 to + 150
Input/output voltage............................................ 1 to  min (V_CC + 0.5, 4.6) V
Power Supply voltage................................................................... 1 to + 4.6 V
Data out current (short circuit)................................................................... 50 mA


Description

The HYB 314400BJ-50 is the new generation dynamic RAM organized as 1 048 576 words by 4-bit.The HYB 314400BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314400BJ to be packed in a standard plastic P-SOJ-26/20 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. HYB 314400BJ-50 System oriented features include single + 3.3 V ( 0.3 V ) power supply, direct interfacing with high performance logic device families.