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HYB 314175BJ-65

Features: • 262 144 words by 16-bit organization• 0 to 70 operating temperature• Fast access and cycle time• RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns (-60 version)• CAS access time: 13ns (-50 & -55 version) 15 ns (-60 version)• Cycle t...

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SeekIC No. : 004368432 Detail

HYB 314175BJ-65: Features: • 262 144 words by 16-bit organization• 0 to 70 operating temperature• Fast access and cycle time• RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns (...

HYB 314175BJ-65 Data Sheet

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Part Number:
HYB 314175BJ-65
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 262 144 words by 16-bit organization
• 0 to 70 operating temperature
• Fast access and cycle time
• RAS access time:
  50 ns (-50 version)
  55 ns (-55 version)
  60 ns (-60 version)
• CAS access time:
  13ns (-50 & -55 version)
  15 ns (-60 version)
• Cycle time:
  89 ns (-50 version)
  94 ns (-55 version)
  104 ns (-60 version)
• Hype page mode (EDO) cycle time
  20 ns (-50 & -55 version)
  25 ns (-60 version)
• High data rate
  50 MHz (-50 & -55 version)
  40 MHz (-60 version)
• Single + 3.3 V (±0.3 V) supply with a builtin VBB generator
• Low Power dissipation
  max. 450 mW active (-50 version)
  max. 432 mW active (-55 version)
  max. 378 mW active (-60 version)
• Standby power dissipation
  7.2 mW standby (TTL)  3.6 mW max. standby (CMOS) 
  0.72 mW max. standby (CMOS) for  Low Power Version
• Output unlatched at cycle end allows twodimensional chip selection
• Read, write, read-modify write, CASbefore-
  RAS refresh, RAS-only refresh, hidden-refresh and hyper page (EDO) mode capability
• 2 CAS / 1 WE control
• Self Refresh (L-Version)
• All inputs and outputs TTL-compatible
• 512 refresh cycles / 16 ms
• 512 refresh cycles / 128 ms
  Low Power Version only
• Plastic Packages:P-SOJ-40-1 400mil width


Pinout

Connection Diagram


Specifications

Operating temperature range 0 to + 70
Storage temperature range 55 to + 150
Input/output voltage 1 to (VCC + 0.5, 4.6) V
Power supply voltage 1 to + 4.6 V
Data out current (short circuit) 50 mA


Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

The HYB 314175BJ-65 is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314175BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include Self Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.




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