HYB 314171BJ-50

Features:

• 262 144 words by 16-bit organization
• 0 to 70 °C operating temperature
• Fast access and cycle time
• RAS access time:
50 ns (-50 version)
60 ns (-60 version)
70 ns (-70 version)
• CAS access time:
15ns (-50,-60 version)
20 ns (-70 version)
• Cycle time:
95 ns (-50 version)
110 ns (-60 version)
130 ns (-70 version)
• Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
• Single + 3.3 V (± 0.3 V) supply with a builtin
VBB generator


Specifications

Operating temperature range ........................................................................................ 0 to + 70 °C
Storage temperature range..................................................................................... 55 to + 150 °C
Input/output voltage .................................................................................... 1 to (V_CC + 0.5, 4.6) V
Power supply voltage.................................................................................................. 1 to + 4.6 V
Data out current (short circuit) ................................................................................................ 50 mA


Description

The HYB HYB 314171BJ-50 is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314171BJ-50 to be packed in a standard plastic 400mil wide P-SOJ-40-1 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include Self Refresh (LVersion),single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.