HYB 314100BJ-50

Features:

• 4 194 304 words by 1-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode Operation
• Single + 3.3 V (± 0.3 V ) supply with a built-in Vbb generator
• Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
• Standby power dissipation:
7.2 mW max. standby (TTL)
3.6 mW max. standby (CMOS)
720 mW max. standby (CMOS) for Low Power Version
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,hidden refresh and test mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles / 16 ms
• 1024 refresh cycles / 128 ms Low Power Version
• Plastic Packages: P-SOJ-26/20-5 with 300 mil width


Pinout




Specifications

Operating temperature range .................................................................0 to 70 °C
Storage temperature range........................................................... 55 to + 150 °C
Input/output voltage .............................................. 1 to + min (VCC + 0.5, 4.6) V
Power Supply voltage ........................................................................ 1 to + 4.6 V
Data out current (short circuit) ...................................................................... 50 mA


Description

The HYB 314100BJ-50 is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 514100BJ/BJL to be packed in a standard plastic P-SOJ-26/20 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.