HYB5117805BSJ -50

Features:

* 2 097 152  words by 8-bit organization
* 0 to 70 °C operating temperature
* Single + 5 V (  10 %) supply
* Low power dissipation
max. 660  mW active (-50 version)
max. 605 mW active  (-60 version)
max. 550 mW active  (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
* Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,self refresh and test mode
* Hyper page mode (EDO) capability
* All inputs, outputs and clocks fully TTL-compatible
* 2048 refresh cycles / 32 ms  (2k-Refresh)
* Plastic Package: P-SOJ-28-3 400 mil


Pinout




Specifications

Operating temperature range ...................................................................0 to 70 °C
Storage temperature range............................................................... 55 to 150 °C
Input/output voltage.........................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage............................................................................-1.0V to 7.0 V
Power dissipation...............................................................................................1.0 W
Data out current (short circuit)...........................................................................50 mA


Description

The HYB HYB5117805BSJ -50 is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB  HYB5117805BSJ -50 utilizes a submicron CMOS silicon gate process technology, as well as advanced  circuit techniques to provide wide operating margins, both internally and for the system user.  Multiplexed address inputs permit the HYB HYB5117805BSJ -50 to be packaged in a standard        SOJ 28  plastic package with 400 mil width. These packages provide high system bit densities and are  compatible with commonly used automatic testing and insertion equipment. System-oriented  features include single + 5 V (  10 %) power supply, direct interfacing with high-performance logic  device families such as Schottky TTL.