HYB5116160BSJ-70

Operating temperature range .........................................................................................0 to 70 °C
Storage temperature range...................................................................................... 55 to 150 °C
Input/output voltage ...............................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation.................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The HYB5116160BSJ-70 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 5116160BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5116160BSJ to be packaged in a standard SOJ 42400 mil plastic package. These packages of the HYB5116160BSJ-70 provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL.