HYB5116165BSJ -60

Features: * 1 048 576 words by 16-bit organization* 0 to 70 °C operating temperature* Single + 5 V ( 10 %) supply* Low power dissipationmax. 1100 active mW ( HYB5118165BSJ-50)max. 990 active mW ( HYB5118165BSJ-60)max. 880 active mW ( HYB5118165BSJ-70)max. 550 active mW ( HYB5116165BSJ-50)max. 495 ...

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HYB5116165BSJ -60 Picture
SeekIC No. : 004369038 Detail

HYB5116165BSJ -60: Features: * 1 048 576 words by 16-bit organization* 0 to 70 °C operating temperature* Single + 5 V ( 10 %) supply* Low power dissipationmax. 1100 active mW ( HYB5118165BSJ-50)max. 990 active mW ( HY...

floor Price/Ceiling Price

Part Number:
HYB5116165BSJ -60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

* 1 048 576 words by 16-bit organization
* 0 to 70 °C operating temperature
* Single + 5 V (  10 %) supply
* Low power dissipation
max. 1100 active mW ( HYB5118165BSJ-50)
max. 990 active mW ( HYB5118165BSJ-60)
max. 880 active mW ( HYB5118165BSJ-70)
max. 550 active mW ( HYB5116165BSJ-50)
max. 495 active mW ( HYB5116165BSJ-60)
max. 440 active mW ( HYB5116165BSJ-70)
11 mW standby (TTL)
5.5. mW standby (MOS)
* Output unlatched at cycle end allows two-dimensional chip selection
* Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and Self Refresh
* Hyper page mode (EDO) capability
* All inputs, outputs and clocks fully TTL-compatible
* 1024 refresh cycles / 16 ms for HYB5118165BSJ  (1k-Refresh)
* 4096 refresh cycles / 64 ms for HYB5116165BSJ  (4k-Refresh)
* Plastic Package: P-SOJ-42-1 400 mil



Pinout

  Connection Diagram




Specifications

Operating temperature range ...............................................................0 to 70 °C
Storage temperature range........................................................... 55 to 150 °C
Input/output voltage.....................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage.........................................................................-1.0V to 7.0 V
Power dissipation............................................................................................1.0 W
Data out current (short circuit)........................................................................50 mA



Description

The HYB5116165BSJ -60 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16-bits. The HYB 5116(8)165BSJ utilizes a submicron CMOS silicon gate process technology, as well as  advanced circuit techniques to provide wide operating margins, both internally and for the system  user. Multiplexed address inputs permit the HYB 5116(8)165BSJ to be packaged in a standard    SOJ 42  plastic package  with 400 mil width. These packages provide high system bit densities and  are compatible with commonly used automatic testing and insertion equipment. System-oriented  features of the HYB5116165BSJ -60 include single + 5 V (  10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL.


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