Features: • Extended Data Out Mode capability• Read-modify-write capability• Multi-bit parallel test capability• TTL(3.3V) compatible inputs and outputs• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability• JEDEC standard pinout• 42pi...
HY51V18163HG: Features: • Extended Data Out Mode capability• Read-modify-write capability• Multi-bit parallel test capability• TTL(3.3V) compatible inputs and outputs• /RAS only, CAS...
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Features: SpecificationsDescriptionThe HY5118164B has the following features including Extended da...
Features: • Extended Data Out Mode capability• Read-modify-write capability• Mul...
Parameter |
Symbol |
Rating |
Unit |
Ambient Temperature |
TA |
0 ~ 70 |
|
Storage Temperature |
TSG |
-55 ~ 125 |
|
Voltage on Any Pin relative to VSS |
VT |
-0.5 ~ Vcc + 0.5 (Max 4.6V) |
V |
Voltage on VDD relative to VSS |
VCC |
-0.5 ~ 4.6 |
V |
Short Circuit Output Current |
IOUT |
50 |
mA |
Power Dissipation |
PT |
1 |
W |
The HY51V18163HG is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out Page- Mode as a high speed access mode. Multiplexed address inputs permit the HY51V18163HG to be packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.