Features: • Extended Data Out Mode capability• Read-modify-write capability• Multi-bit parallel test capability• TTL(3.3V) compatible inputs and outputs• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability• JEDEC standard pinout• 24(2...
HY51V17403HG: Features: • Extended Data Out Mode capability• Read-modify-write capability• Multi-bit parallel test capability• TTL(3.3V) compatible inputs and outputs• /RAS only, CAS...
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Features: SpecificationsDescriptionThe HY5118164B has the following features including Extended da...
Features: • Extended Data Out Mode capability• Read-modify-write capability• Mul...
Parameter | Symbol |
Rating |
Unit |
Ambient Temperature | TA |
0 ~ 70 |
|
Storage Temperature | TSTG |
-55 ~ 125 |
|
Voltage on Any Pin relative to Vss | VT |
-0.5 ~ Vcc + 0.5 (Max 4.6V) |
V |
Voltage on Vcc relative to Vss | VCC |
-0.5 ~ 4.6 |
V |
Short Circuit Output Current | IOUT |
50 |
mA |
Power Dissipation | PT |
1 |
W |
The HY51V17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page- Mode as a high speed access mode. Multiplexed address inputs permit the HY51V17403HG/HGL to be packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.