HY27US(16)281A

NOTE: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute
Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. 2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.

The HYNIX HY27US(16)281A series is a 16Mx8bit with spare 4G bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply.

HY27US(16)281A's NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory HY27US(16)281A is divided into blocks that can be erased independently so it is possible to preserve valid data while old
data is erased.

The device HY27US(16)281A contains 1024 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected
Flash cells.

A program operation allows to write the 512-byte page in typical 200us and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) block.

Data in the page mode can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command input. This HY27US(16)281A interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint.

Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin.

The HY27US(16)281A on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data.

The modifying can be locked using the WP# input pin.

The output pin RB# (open drain buffer) signals the status of the device HY27US(16)281A during each operation. In a system with multiple memories the RB# pins can be connected all together to provide a global status signal.

Even the write-intensive systems can take advantage of the HY27US(16)281A extended reliability of 100K program/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.

Optionally the chip could be offered with the CE# don't care function. This option allows the direct download of the
code from the NAND Flash memory device HY27US(16)281A by a microcontroller, since the CE# transitions do not stop the read  peration.

The HY27US(16)281A copy back function allows the optimization of defective blocks management: when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase.

This device HY27US(16)281A includes also extra features like OTP/Unique ID area, Block Lock mechanism, Automatic Read at Power Up,
Read ID2 extension.

The Hynix HY27US(08/16)281A series is available in 48 - TSOP1 12 x 20 mm, 48 - USOP1 12 x 17 mm.