HY27UT08G2A-TPCB

The HY27UT08G2A-TPCB is largely the same as the HY27UF081G2M series in many characters. The HY27UF081G2M is a kind of 128 M x 8 bits high density NAND flash memory. It is offered in 1.8 V VCC power supply and in 3.3 V VCC power supply.It provides the most cost-effective solution for the solid state mass storage market and is available in the 48TSOP1 package.

There are some HY27UT08G2A-TPCB features as follows. (1) fast block erase time which is 2 ms; (2) electronical signature including manufacture code and device code; (3) chip enable"don't care" option; (4) automatic page 0 raed at power-up option; (5) hardware data protection; (6) data integrity which includes 10 years data retention.

The following is some information about HY27UT08G2A-TPCB's absolute maximum ratings at both 1.8 V and 3.3 V. (1): ambient operating temperature (TA) which is from 0 to 70 ; (2): temperature under bias (TBIAS) is from -50 to 125 ; (3): storage temperature (Tstg) is from -65 to 150 ; (4): input or output voltage (VIN,VOUT) ranges from -0.6 V to 2.7 V; (5): supply voltage (VCC) is from -0.6 V to 2.7 V; (6): the maximum input / output capacitance is 10 pF when VIL is 0 V; (7): the typical operating current is 8 mA and is 15 for the maximum at 1.8 V and TRC is 60 ns. If you want more about its electrical characters,please download the datasheet at www.seekic.com.