DescriptionThe HT6264 is designed as one kind of 65536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5-volt power supply. This device is built with HOLTEK's high performance CMOS 0.8 um SPDM process. Six-transistor full CMOS memory cell provides low s...
HT6264: DescriptionThe HT6264 is designed as one kind of 65536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5-volt power supply. This device is built with HOL...
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The HT6264 is designed as one kind of 65536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5-volt power supply. This device is built with HOLTEK's high performance CMOS 0.8 um SPDM process. Six-transistor full CMOS memory cell provides low standby current and high-reliability. Inputs and tri-state outputs are TTL compatible and allow for direct interfacing with common system bus structures.
Features of the HT6264 are:(1)single 5 V power supply;(2)low power consumption: operating is 200 mW and standby is 5 uW;(3)70 ns high speed access time;(4)memory expansion by pin OE;(5)common I/O using tri-state outputs;(6)TTL compatible interface levels;(7)fully static operation;(8)pin-compatible with standard 8K x 8 bits of EPROM;(9)28-pin DIP / SDIP / SOP package.
The absolute maximum ratings of the HT6264 can be summarized as:(1)VDD to GND: -0.3 V to +7.0 V;(2)IN, IN / OUT voltage to GND: -0.3 V to Vcc+0.5 V;(3)operating temperature: -40 to +85 ;(4)storage temperature (plastic): -55 to +125 ;(5)temperature under bias: -10 to +85 ;(6)power dissipation: 1.0 W. If you want to know more information such as the electrical characteristics about the HT6264, please download the datasheet in www.seekic.com or www.chinaicmart.com.