HT6256

Voltage - Supply: 4.5 V ~ 5.5 V
Packaging: Tube
Speed: 20MHz
Memory Size: 256K (32K x 8)
Format - Memory: RAM
Memory Type: SRAM
Interface: Parallel
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-CDIP
Series: HTMOS™
Manufacturer: Honeywell Microelectronics & Precision Sensors
Operating Temperature: -55°C ~ 225°C


Features:

• Specified Over -55 to +225°C
• Fabricated with HTMOS™ IV Silicon on Insulator (SOI)
• Read/Write Cycle Times 50 ns Support 20 MHz Clock
• Asynchronous Operation
• CMOS Input/Output Buffers
• Single 5 V ± 10% Power Supply
• Hermetic 28-Lead Ceramic DIP


Application

• Down-Hole Oil Well
• Avionics
• Turbine Engine Control
• Industrial Process Control
• Nuclear Reactor
• Electric Power Conversion
• Heavy Duty Internal Combustion Engines


Pinout




Specifications

Symbol	Parameter		Rating		Units
			Min	Max
VDD	Supply Voltage Range (2)		-0.5	6.5	V
VPIN	Voltage on Any Pin (2)		-0.5	VDD+0.5	V
TSTORE	Storage Temperature (Zero Bias)		-65	325
TSOLDER	Soldering Temperature (5 Seconds)			355
PD	Maximum Power Dissipation (3)			2	W
IOUT	DC or Average Output Current			25	mA
VPROT	ESD Input Protection Voltage (4)		2000		V
JC	Thermal Resistance (Jct-to-Case)	28 DIP		10	°C/W

(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must ot exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.

Description

The 32K x 8 High Temperature Static RAM HT6256 is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell's HTMOS™ technology, and is designed for use in systems operating in severe high temperature environments.

The RAM HT6256 requires only a single 5 V ± 10% power supply and has CMOS compatible I/O. Power consumption is typically less than 30 mW/MHz in operation, and less than 10 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 50 ns at 5 V.

The RAM HT6256 provides guaranteed performance over the full -55 to +225°C temperature range. Typically, parts will operate up to +300°C for a year, with derated performance. All parts are burned in at 250°C to eliminate infant mortality.

Parameters:

Technical/Catalog Information	HT6256
Vendor	Honeywell Microelectronics & Precision Sensors
Category	Undefined Category
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	HT6256 HT6256