HT24LC64

SpecificationsOperating Temperature (Commercial) .............................................................................. 0 to 70Storage Temperature .................................................................................................. -50 to 125Applied VCC Voltage with Respect t...

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HT24LC64 Picture
SeekIC No. : 004366642 Detail

HT24LC64: SpecificationsOperating Temperature (Commercial) .............................................................................. 0 to 70Storage Temperature ..............................................

floor Price/Ceiling Price

Part Number:
HT24LC64
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Specifications

Operating Temperature (Commercial) .............................................................................. 0 to 70
Storage Temperature .................................................................................................. -50 to 125
Applied VCC Voltage with Respect to VSS .......................................................VSS -0.3V to VSS+6.0V
Applied Voltage on any Pin with Respect to VSS .............................................VSS -0.3V to VCC+0.3V

Note: These are stress ratings only. Stresses exceeding the range specified under 'Absolute Maximum Ratings" may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.






Description

The HT24LC64 is a 64K-bit 2-wire serial read/write non-volatile memory device using the CMOS floating gate process. Its 65536 bits of memory are organized into 8192 words and 8 bits per word. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The HT24LC64 has high reliability endurance of 1M erase/write cycles and 40-year data retention.






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