Infrared Emitters IR Emitter
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Features: `Fully Compliant to IrDA Physical Layer Speciication 1.4 from 9.6 kbit/s to 115.2 kbit/...
Wavelength : | 940 nm | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Package / Case : | T-1 3/4 |
Parameter | Symbol | Minimum | Unit | Reference |
Peak Forward Current | IFPK | 500 | mA | Figure 3 Duty cycle = 20% Pulse Width = 100us |
Forward Current | IFDC | 100 | mA | [1] |
Power Dissipation | PDISS | 170 | mW | |
Reverse Voltage | VR | - | V | IR=100uA |
Storage Temperature | TS | 100 | ||
LED Junction Temperature | TJ | 110 | ||
Lead Soldering Temperature | 260 for 5 sec |
The HSDL-4270 Infrared emitter was designed for applications that require high power and low forward voltage. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for efficiency at emission wavelengths of 940 nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package.
Technical/Catalog Information | HSDL-4270 |
Vendor | Lite-On Inc |
Category | Optoelectronics |
Voltage - Forward (Vf) Typ | 1.2V |
Current - DC Forward (If) | 100mA |
Wavelength | 940nm |
Viewing Angle | 15° |
Radiant Intensity (Ie) Min @ If | 76mW @ 100mA |
Mounting Type | Through Hole |
Package / Case | T 1 3/4 |
Orientation | Top View |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HSDL 4270 HSDL4270 |