Infrared Emitters IR Emitter 870nm High Power
HSDL-4261: Infrared Emitters IR Emitter 870nm High Power
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Features: `Fully Compliant to IrDA Physical Layer Speciication 1.4 from 9.6 kbit/s to 115.2 kbit/...
Wavelength : | 870 nm | Radiant Intensity : | 180 mW/sr | ||
Maximum Operating Temperature : | + 70 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | T-1 3/4 | Packaging : | Bulk |
Parameter | Symbol | Min. | Max | Unit | Reference |
DC Forward Current Power Dissipation |
IFDC PDISS |
- - |
100 190 |
mA mW |
[1], Fig. 2 |
Reverse Voltage Operating Temperature |
VR |
5 -40 |
- 70 |
V |
|
Storage Temperature LED Junction Temperature |
TS TJ |
-40 - |
100 110 |
||
Lead Soldering Temperature | - | 260 for 5 sec |
Notes:
1. Derate as shown in Figure 6.
The HSDL-4261 Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package.
Technical/Catalog Information | HSDL-4261 |
Vendor | Lite-On Inc |
Category | Optoelectronics |
Voltage - Forward (Vf) Typ | 1.4V |
Current - DC Forward (If) | 100mA |
Wavelength | 870nm |
Viewing Angle | - |
Radiant Intensity (Ie) Min @ If | - |
Mounting Type | Through Hole |
Package / Case | T 1 3/4 |
Orientation | Top View |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HSDL 4261 HSDL4261 516 1706 ND 5161706ND 516-1706 |