Infrared Emitters IR Emitter
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Features: `Fully Compliant to IrDA Physical Layer Speciication 1.4 from 9.6 kbit/s to 115.2 kbit/...
Wavelength : | 875 nm | Radiant Intensity : | 200 mW/sr | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | T-1 3/4 | Packaging : | Bulk |
Parameter |
Symbol |
Min |
Max |
Unit |
Reference |
Peak Forward Current |
IFPK |
- |
500 |
mA |
Figure 3 Duty cycle = 20% Pulse Width = 100us |
Forward Current |
IFDC |
- |
100 |
mA |
1 |
Power Dissipation |
PDISS |
- |
230 |
mW |
|
Reverse Voltage |
VR |
4 |
- |
V |
IR=100uA |
Storage Temperature |
TS |
-40 |
100 |
||
LED Junction Temperature |
TJ |
110 |
|||
Lead Soldering Temperature |
260 for 5 sec |
The HSDL-4260 High Power Infrared emitter was designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and
efficiency at emission wavelengths of 875nm.The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package.
Technical/Catalog Information | HSDL-4260 |
Vendor | Lite-On Inc |
Category | Optoelectronics |
Voltage - Forward (Vf) Typ | - |
Current - DC Forward (If) | 100mA |
Wavelength | 875nm |
Viewing Angle | - |
Radiant Intensity (Ie) Min @ If | - |
Mounting Type | Through Hole |
Package / Case | T 1 3/4 |
Orientation | Top View |
Packaging | Bulk |
Other Names | HSDL 4260 HSDL4260 |