Infrared Emitters IR Emitter
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Features: `Fully Compliant to IrDA Physical Layer Speciication 1.4 from 9.6 kbit/s to 115.2 kbit/...
Wavelength : | 870 nm | Radiant Intensity : | 180 mW/sr | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | T-1 3/4 | Packaging : | Bulk |
Parameter | Symbol | Minimum | Maximum | Unit |
Peak Forward Current | IFPK | - | 500 | mA |
Forward Current Power Dissipation |
IFDC PDISS |
- - |
100 190 |
mA mW |
Reverse Voltage Storage Temperature LED Junction Temperature |
VR TS TJ |
5 -40 |
- 100 110 |
V |
Lead Soldering Temperature | 260 for 5 sec |
The HSDL-4250 and HSDL-4251 High Performance Infrared emitters were designed for applications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm. The material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package.
Technical/Catalog Information | HSDL-4250 |
Vendor | Lite-On Inc |
Category | Optoelectronics |
Voltage - Forward (Vf) Typ | 1.4V |
Current - DC Forward (If) | 100mA |
Wavelength | 870nm |
Viewing Angle | 15° |
Radiant Intensity (Ie) Min @ If | 124mW @ 100mA |
Mounting Type | Through Hole |
Package / Case | T 1 3/4 |
Orientation | Top View |
Packaging | Bulk |
Other Names | HSDL 4250 HSDL4250 |