HSDL-4200

Features: • Very High Power TS AlGaAs Technology• 875 nm Wavelength• T-13/4 Package• Low Cost• Very High Intensity: HSDL-4220 - 38 mW/sr HSDL-4230 - 75 mW/sr• Choice of Viewing Angle: HSDL-4220 - 30° HSDL-4230 - 17°• Low Forward Voltage for Series Operatio...

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SeekIC No. : 004366085 Detail

HSDL-4200: Features: • Very High Power TS AlGaAs Technology• 875 nm Wavelength• T-13/4 Package• Low Cost• Very High Intensity: HSDL-4220 - 38 mW/sr HSDL-4230 - 75 mW/sr• Cho...

floor Price/Ceiling Price

Part Number:
HSDL-4200
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/7

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Product Details

Description



Features:

• Very High Power TS AlGaAs Technology
• 875 nm Wavelength
• T-13/4 Package
• Low Cost
• Very High Intensity:
    HSDL-4220 - 38 mW/sr
    HSDL-4230 - 75 mW/sr
• Choice of Viewing Angle:
    HSDL-4220 - 30°
    HSDL-4230 - 17°
• Low Forward Voltage for Series Operation
• High Speed: 40 ns Rise Times
• Copper Leadframe for Improved Thermal and Optical Characteristics



Application

• Compatible with IrDA SIR Standard
• IR Audio
• IR Telephones
• High Speed IR
Communications
IR LANs
IR Modems
IR Dongles
• Industrial IR Equipment
• IR Portable Instruments
• Interfaces with Crystal
Semiconductor CS8130 Infrared Transceiver



Specifications

Parameter
Symbol
Min.
Max.
Unit
Ref.
Peak Forward Current
IFPK
500
mA
[2], Fig. 2b
Duty Factor = 20%
Pulse Width = 100 s
Average Forward Current
IFAVG
100
mA
[2]
DC Forward Current
IFDC
100
mA
[1], Fig. 2a
Power Dissipation
PDISS
260
mW
Reverse Voltage (IR = 100 A)
VR
5
A
Transient Forward Current (10 s Pulse)
IFTR
1.0
[3]
Operating Temperature
TO
0
75
Storage Temperature
TS
-20
85
LED Junction Temperature
TJ
110
Lead Solder Temperature
[1.6 mm (0.063 in.) from body]
260 for
5 seconds

Notes:
1. Derate linearly as shown in Figure 4.
2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current as specified in Figure 5.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
the wire bonds.


Description

The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gallium Arsenide (TS AlGaAs) LED technology. These devices are optimized for speed and efficiency at emission wavelengths of 875 nm. This material produces high radiant efficiency over a wide range of currents up to 500 mA peak current. The HSDL-4200 series of emitters are available in a choice of viewing angles, the HSDL-4230 at 17° and the HSDL-4220 at 30°. Both lamps are packaged in clear T-13/4 (5 mm) packages.

The package design of these emitters HSDL-4200 is optimized for efficient power dissipation. Copper leadframes are used to obtain better thermal performance than the traditional steel leadframes.

The wide angle emitter, HSDL-4200, is compatible with the IrDA SIR standard and can be used with the HSDL-1000 integrated SIR transceiver.




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