Features: • Part Identification HSD8M64D8A-F/10H : 100MHz (CL=2&3) HSD8M64D8A-F/10L : 100MHz (CL=3) HSD8M64D8A-F/10 : 100MHz (CL=2) HSD8M64D8A-F/13 : 133MHz (CL=3) F means Auto & Self refresh with Low-Power (3.3V)• Burst mode operation• Auto & self refresh capability ...
HSD8M64D8A: Features: • Part Identification HSD8M64D8A-F/10H : 100MHz (CL=2&3) HSD8M64D8A-F/10L : 100MHz (CL=3) HSD8M64D8A-F/10 : 100MHz (CL=2) HSD8M64D8A-F/13 : 133MHz (CL=3) F means Auto & Self ...
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PARAMETER |
SYMBOL |
RATING |
Voltage on Any Pin Relative to Vss |
VIN ,OUT |
-1V to 4.6V |
Voltage on Vcc Supply Relative to Vss |
Vcc |
-1V to 4.6V |
Power Dissipation |
PD |
8W |
Storage Temperature |
TSTG |
-55 to 150 |
Short Circuit Output Current |
IOS |
400mA |
The HSD8M64D8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD8M64D8A is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.