HSD8M32B4

Features: • Part IdentificationHSD8M32B4-10 : 100MHz ( CL=2)HSD8M32B4-10L : 100MHz ( CL=3)HSD8M32B4-12 : 125MHz ( CL=3)HSD8M32B4-13 :133MHz ( CL=3)• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• Singl...

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SeekIC No. : 004366045 Detail

HSD8M32B4: Features: • Part IdentificationHSD8M32B4-10 : 100MHz ( CL=2)HSD8M32B4-10L : 100MHz ( CL=3)HSD8M32B4-12 : 125MHz ( CL=3)HSD8M32B4-13 :133MHz ( CL=3)• Burst mode operation• Auto &...

floor Price/Ceiling Price

Part Number:
HSD8M32B4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Part Identification
HSD8M32B4-10 : 100MHz ( CL=2)
HSD8M32B4-10L : 100MHz ( CL=3)
HSD8M32B4-12 : 125MHz ( CL=3)
HSD8M32B4-13 :133MHz ( CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• FR4-PCB design
• The used device is K4S641632D-TC





Specifications

Symbol
Rating
Unit
Voltage on Any Pin Relative to Vss
VIN ,OUT
-1V to 4.6V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 4.6V
Power Dissipation
PD
4W
Storage Temperature
TSTG
-55 to 150
Short Circuit Output Current
IOS
50mA

Notes :
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.






Description

The HSD8M32B4 is a 8M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II packages mounted on a 144-pin, FR-4-printed circuit board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The HSD8M32B4 is a SO-DIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O transactions ar possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.






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