Features: • Part IdentificationHSD8M32B4-10 : 100MHz ( CL=2)HSD8M32B4-10L : 100MHz ( CL=3)HSD8M32B4-12 : 125MHz ( CL=3)HSD8M32B4-13 :133MHz ( CL=3)• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• Singl...
HSD8M32B4: Features: • Part IdentificationHSD8M32B4-10 : 100MHz ( CL=2)HSD8M32B4-10L : 100MHz ( CL=3)HSD8M32B4-12 : 125MHz ( CL=3)HSD8M32B4-13 :133MHz ( CL=3)• Burst mode operation• Auto &...
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Features: • Part IdentificationHSD8M32F4V :Height from bottom to top 11.3mmHSD8M32F4VA :Heig...
Symbol |
Rating |
Unit |
Voltage on Any Pin Relative to Vss |
VIN ,OUT |
-1V to 4.6V |
Voltage on Vcc Supply Relative to Vss |
Vcc |
-1V to 4.6V |
Power Dissipation |
PD |
4W |
Storage Temperature |
TSTG |
-55 to 150 |
Short Circuit Output Current |
IOS |
50mA |
Notes :
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
The HSD8M32B4 is a 8M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II packages mounted on a 144-pin, FR-4-printed circuit board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The HSD8M32B4 is a SO-DIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O transactions ar possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.