Features: • Part Identification:HSD8M64B8W-10 : 100MHz (CL=2)HSD8M64B8W-10L : 100MHz (CL=3)HSD8M64B8W-12 : 125MHz (CL=3)HSD8M64B8W-13 : 133MHz (CL=3)• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and outputs• Sin...
HSD8M64B8W: Features: • Part Identification:HSD8M64B8W-10 : 100MHz (CL=2)HSD8M64B8W-10L : 100MHz (CL=3)HSD8M64B8W-12 : 125MHz (CL=3)HSD8M64B8W-13 : 133MHz (CL=3)• Burst mode operation• Auto &a...
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PARAMETER |
SYMBOL |
RATING |
Voltage on Any Pin Relative to Vss |
VIN ,OUT |
-1V to 4.6V |
Voltage on Vcc Supply Relative to Vss |
Vcc |
-1V to 4.6V |
Power Dissipation |
PD |
8W |
Storage Temperature |
TSTG |
-55 to 150 |
Short Circuit Output Current |
IOS |
400mA |
The HSD8M64B8W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy ubstrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD8M64B8W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.