HSD8M32M4V

Features: • Part IdentificationHSD8M32M4V-13/F13 :133MHz ( CL=3)HSD8M32M4V-12/F12: 125MHz (CL=3)HSD8M32M4V-10/F10: 100MHz (CL=2)HSD8M32M4V-10L/10L: 100MHzHSD8M32M4V-66/F66: 66MHz (CL=2&3)F means Auto & Self refresh with Low Power (3.3V)• Burst mode operation• Auto & ...

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SeekIC No. : 004366049 Detail

HSD8M32M4V: Features: • Part IdentificationHSD8M32M4V-13/F13 :133MHz ( CL=3)HSD8M32M4V-12/F12: 125MHz (CL=3)HSD8M32M4V-10/F10: 100MHz (CL=2)HSD8M32M4V-10L/10L: 100MHzHSD8M32M4V-66/F66: 66MHz (CL=2&3)F...

floor Price/Ceiling Price

Part Number:
HSD8M32M4V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Part Identification
HSD8M32M4V-13/F13 :133MHz ( CL=3)
HSD8M32M4V-12/F12: 125MHz (CL=3)
HSD8M32M4V-10/F10: 100MHz (CL=2)
HSD8M32M4V-10L/10L: 100MHz
HSD8M32M4V-66/F66: 66MHz (CL=2&3)
F means Auto & Self refresh with Low Power (3.3V)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• FR4-PCB design
• The used device is KM48S16030AT
• Pin assignment is compatible with
- HSD8M32M4V
- HSD32M32M4V





Specifications

PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN ,OUT
-1V to 4.6V
Voltage on Vcc Supply Relative to Vss
Vcc
-1V to 4.6V
Power Dissipation
PD
4W
Storage Temperature
TSTG
-55 to 150
Short Circuit Output Current
IOS
50mA
Notes :
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.





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