Features: • Part IdentificationHSD32M64F8R-10L : 100MHz (CL=3)HSD32M64F8R-10 : 100MHz (CL=2)HSD32M64F8R-13 : 133MHz (CL=3)• Burst mode operation• Auto & self refresh capability (8K Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ±0.3V power supply...
HSD32M64F8R: Features: • Part IdentificationHSD32M64F8R-10L : 100MHz (CL=3)HSD32M64F8R-10 : 100MHz (CL=2)HSD32M64F8R-13 : 133MHz (CL=3)• Burst mode operation• Auto & self refresh capability...
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Features: • Part IdentificationHSD32M32M4V-13/F13 :133MHz ( CL=3)HSD32M32M4V-12/F12: 125MHz ...
Features: • Part IdentificationHSD32M64B8A-F/10L : 100MHz (CL=3)HSD32M64B8A-F/10 : 100MHz (C...
Parameter |
Symbol |
Ratings |
Unit |
Voltage on any pin relative to VSS |
VIN, VOUT |
-1 to 4.6 |
V |
Voltage on VCC supply relative to VSS |
VCC |
-1 to 4.6 |
V |
Storage Temperature |
TSTG |
-55 to +150 |
°C |
Power Dissipation |
PD |
8 |
W |
Short Circuit Current |
IOS |
50 |
mA |
The HSD32M64F8R is a 32M x 64 bit Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin TSSOP package on a 120-pin glass-epoxy. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD32M64F8R is a SMM(Stackable Memory Module type) .Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.