Features: • Part IdentificationHSD32M32M4V-13/F13 :133MHz ( CL=3)HSD32M32M4V-12/F12: 125MHz (CL=3)HSD32M32M4V-10/F10: 100MHz (CL=2)HSD32M32M4V-10L/F10L: 100MHzF means Auto & Self refresh with Low Power (3.3V)• Burst mode operation• Auto & self refresh capability (8192 Cy...
HSD32M32M4V: Features: • Part IdentificationHSD32M32M4V-13/F13 :133MHz ( CL=3)HSD32M32M4V-12/F12: 125MHz (CL=3)HSD32M32M4V-10/F10: 100MHz (CL=2)HSD32M32M4V-10L/F10L: 100MHzF means Auto & Self refresh w...
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Features: • Part IdentificationHSD32M64B8A-F/10L : 100MHz (CL=3)HSD32M64B8A-F/10 : 100MHz (C...
PARAMETER |
SYMBOL |
RATING |
Voltage on Any Pin Relative to Vss |
VIN,OUT |
-1V to 4.6V |
Voltage on Vcc Supply Relative to Vss |
VCC |
-1V to 4.6V |
Power Dissipation |
PD |
4W |
Storage Temperature |
TSTG |
-65 to +150 |
Operating Temperature |
TA |
50mA |
The HSD32M32M4V is a 32M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages mounted on a 72-pin, FR-4-printed circuit board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The HSD32M32M4V is a SIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O
transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.