DescriptionThe HSB857-B belongs to the HSB857 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for low frequency power amplifier. It is available in the TO-126ML package. The following is the description about HSB857-B's absolute maximum r...
HSB857-B: DescriptionThe HSB857-B belongs to the HSB857 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for low frequency power amplifier. It is avai...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The HSB857-B belongs to the HSB857 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for low frequency power amplifier. It is available in the TO-126ML package.
The following is the description about HSB857-B's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 1.5 W when TA is 25 and is 10 W at TC is 25 ; (3): collector to base voltage(BVCBO) is -60 V and collector to emitter voltage(BVCEO) is -50 V,emitter to base voltage(VBEBO) is -5 V; (4): IC collector current is -3 A and IC collector current(IC peak) is -4.5 A; (5): the minimum VBCBO is -60 V when IC -50 A; (6): the minimum BVCEO is -50 V when IC is -1 mA,and VBEBO is -5 V at IE is -50 A; (7): the maximum ICBO is -1 A when VCB is -50 V and IEBO is -1 A at VEB is -4 V; (8): the maximum VCE(sat) is -1 V and the typical is -0.3 V at the condition of IC is -2 A and IB is -0.2 A; (9): the typical fT is 15 MHz at IC is -500 mA and VCE is -3 V.
If you want to know more information about the HSB857-B ,please download the datasheet at www.seekic.com.