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HS-65647RH

Features: • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day• Latch-up Free• LET Threshold >250 MEV/mg/cm2• Low Standby Supply Current 10mA (Max)• Low O...

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SeekIC No. : 004365821 Detail

HS-65647RH: Features: • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day• Latch-up Fr...

HS-65647RH Data Sheet

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Part Number:
HS-65647RH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 1.2 Micron Radiation Hardened SOS CMOS
    - Total Dose 3 x 105 RAD (Si)
    - Transient Upset >1 x 1011 RAD (Si)/s
    - Single Event Upset < 1 x 10-12 Errors/Bit-Day
• Latch-up Free
• LET Threshold >250 MEV/mg/cm2
• Low Standby Supply Current 10mA (Max)
• Low Operating Supply Current 100mA (2MHz)
• Fast Access Time 50ns (Max), 35ns (Typ)
• High Output Drive Capability
• Gated Input Buffers (Gated by E2)
• Six Transistor Memory Cell
• Fully Static Design
• Asynchronous Operation
• CMOS Inputs
• 5V Single Power Supply
• Military Temperature Range -55 to +125
• Industry Standard JEDEC Pinout


Pinout

Connection Diagram


Specifications

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . .GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 to +150
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . +300
Typical Derating Factor. . . . . . . . . . . . 3mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 1


Description

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizing dose, high intensity ionizing dose rates, and cosmic rays.

Low power operation is provided by a fully static design of HS-65647RH. Low standby power can be achieved without pull-up resistors, due to the gated input buffer design.




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