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HN2S03FU

Features: `HN2S03FU is composed of 3 independent diodes.`Low forward voltage : VF (3) = 0.50V (typ.)`Low reverse current : IR= 0.5A (max)`Small total capacitance : CT = 3.9pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse v...

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SeekIC No. : 004365018 Detail

HN2S03FU: Features: `HN2S03FU is composed of 3 independent diodes.`Low forward voltage : VF (3) = 0.50V (typ.)`Low reverse current : IR= 0.5A (max)`Small total capacitance : CT = 3.9pF (typ.)Specifications ...

HN2S03FU Data Sheet

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Part Number:
HN2S03FU
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/11/14

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Product Details

Description



Features:

`HN2S03FU is composed of 3 independent diodes.
`Low forward voltage : VF (3) = 0.50V (typ.)
`Low reverse current : IR= 0.5A (max)
`Small total capacitance : CT = 3.9pF (typ.)


Specifications

Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage VRM 25 V
Reverse voltage VR 25 V
Maximum (peak) forward current IFM 100* mA
Average forward current IO 50* mA
Surge current (10ms) IFSM 1 A
Power dissipation P 200** mW
Junction temperature Tj 125
Storage temperature range Tstg -55~125
Operating temperature range Topr -40~100

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one.
** :Total rating




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