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HN2S01FU

Features: ·HN2S01FU is composed of 3 independent diodes.·Low reverse current: VF = 0.23V (typ.) @IF = 5mASpecifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200* mA Average ...

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HN2S01FU: Features: ·HN2S01FU is composed of 3 independent diodes.·Low reverse current: VF = 0.23V (typ.) @IF = 5mASpecifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V...

HN2S01FU Data Sheet

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Part Number:
HN2S01FU
Supply Ability:
5000

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Upload time: 2024/11/14

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Product Details

Description



Features:

·HN2S01FU is composed of 3 independent diodes.
·Low reverse current: VF = 0.23V (typ.) @IF = 5mA


Specifications

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 15 V
Reverse voltage VR 10 V
Maximum (peak) forward current IFM 200* mA
Average forward current IO 100* mA
Surge current (10ms) IFSM 1* A
Power dissipation P 200* mW
Junction temperature Tj 125
Storage temperature range Tstg -55~125
Operating temperature range Topr -55~100

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
      In the case of using 2 ro 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one.


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