Features: ` On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V` Organization - AND Flash Memory: (2048 + 64) bytes ´ (More than 16,057 sectors) - Data register: (2048 + 64) bytes` Multi-level memory cell - 2 bit/per memory cell` Automatic programming - Sector program time: 3.0 ms (typ) ...
HN29W25611: Features: ` On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V` Organization - AND Flash Memory: (2048 + 64) bytes ´ (More than 16,057 sectors) - Data register: (2048 + 64) bytes` Multi-l...
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Features: ` On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V` Organization -- AND Flash Mem...
Parameter |
Symbol |
Value |
Unit |
Notes |
VCC voltage | VCC |
0.6 to +7 |
V |
1 |
VSS voltage | VSS |
0 |
V |
|
All input and output voltages | Vin, Vout |
0.6 to 7 |
V |
1,2 |
Operating temperature range | Topr |
0 to +70 |
||
Storage temperature range | Tstg |
65 to +125 |
3 |
|
Storage temperature under bias | Tbias |
10 to +80 |
The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611 are more than 16,057 (98% of all sector address) and less than 16,384 sectors.