Features: · High speed: Access time 70/85 ns (max)· Low power dissipation Active mode: 30 mW (typ) (f = 1 MHz)· High reliability and fast programming Programming voltage: +12.5 V DC Fast High-Reliability Programming Algorithm available· Device identifier mode Manufacturer code and device codePinou...
HN27C256HG: Features: · High speed: Access time 70/85 ns (max)· Low power dissipation Active mode: 30 mW (typ) (f = 1 MHz)· High reliability and fast programming Programming voltage: +12.5 V DC Fast High-Reliab...
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Features: SpecificationsDescription The Hitachi HN27C101A series is a 1-megabt ultrviolet erasable...
Features: ` Single power supply: +5 V ± 10%` Fast high-reliability programming mode and fast high-...
Features: ` Single power supply: +5 V ± 5% (HN27C101AG-10/HN27C301AG-10) +5 V ± 10% (HN27C101AG/HN...
Parameter |
Symbol |
Value |
Unit |
All input and output voltages*1 |
Vin, Vout |
0.6*2 to +7.0 |
V |
A9 input voltage*1 |
VID |
0.6*2 to + 13.5 |
V |
VPP voltage*1 |
VPP |
0.6 to +13.5 |
V |
VCC voltage*1 |
VCC |
0.6 to + 7.0 |
V |
Operating temperature range |
Topr |
0 to +70 |
°C |
Storage temperature range |
Tstg |
55 to +125 |
°C |
Storage temperature range under bias |
Tbias |
10 to +80 |
°C |
The Hitachi HN27C256HG is a 256-kbit ultraviolet erasable and electrically programmable ROM, featuring sub-100-ns access times. It realizes access time of 70 ns and 85 ns, employing the advanced fine process and high speed circuitry technique. The timing conditions such as access time or output hold time are designed as same as our byte-wide SRAMs', allowing to use with SRAMs on the same memory board by the same read timings. So its board design in 16-bit microprocessor systems is easy. Also, the HN27C256HG realizes faster programming time than our conventional 256-kbit EPROM by Hitachi's Fast High-Reliability Programming Algorithm. Pin arrangement, pin configuration and programming voltage are compatible with our 256-kbit EPROM series, therefore existing programmers can be used with the it.