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HN27C256AP

Features: ` High speed Access time: 120/150 ns (max)` Low power dissipation Active mode: 25 mW (typ) (f = 1 MHz) Standby mode: 5 W (typ)` High reliability and fast programming Programming voltage: +12.5 V DC Fast High-Reliability Programming Algorithm available` Device identifier mode Manufacturer...

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SeekIC No. : 004364961 Detail

HN27C256AP: Features: ` High speed Access time: 120/150 ns (max)` Low power dissipation Active mode: 25 mW (typ) (f = 1 MHz) Standby mode: 5 W (typ)` High reliability and fast programming Programming voltage: +...

HN27C256AP Data Sheet

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Part Number:
HN27C256AP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  High speed
     Access time: 120/150 ns (max)
`  Low power dissipation
     Active mode: 25 mW (typ) (f = 1 MHz)
     Standby mode: 5 W (typ)
`  High reliability and fast programming
     Programming voltage: +12.5 V DC
     Fast High-Reliability Programming Algorithm available
`  Device identifier mode
     Manufacturer code and device code


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
All input and output voltages*1
Vin, Vout
0.6*2 to +7.0
V
A9 input voltage*1
VID
0.6*2 to + 13.5
V
VPP voltage*1
VPP
0.6 to +13.5
V
VCC voltage*1
VCC
0.6 to + 7.0
V
Operating temperature range
Topr
0 to +70
°C
Storage temperature range
Tstg
55 to +125
°C
Storage temperature range under bias
Tbias
10 to +80
°C
Notes: 1. Relative to VSS
2. Vin, Vout and VID min = 1.0 V for pulse width 50 ns


Description

The HN27C256AP/AFP is a 32768-word by 8-bit one time electrically programmable ROM. Initially, all bits of it are in the "1" State (Output High). Data is introduced by selectively programming "0" into the desired bit locations. This device is packaged in a 28-pin plastic package (DIP, SOP). Therefore, this device cannot be re-written.




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