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HN1D04FU

Features: 􀁺 ·Low forward voltage : VF(3) = 0.90V (typ.)􀁺 ·Fast reverse recovery time : trr = 1.6ns (typ.)􀁺 ·Small total capacitance : CT = 0.9pF (typ.)PinoutSpecifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM ...

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HN1D04FU: Features: 􀁺 ·Low forward voltage : VF(3) = 0.90V (typ.)􀁺 ·Fast reverse recovery time : trr = 1.6ns (typ.)􀁺 ·Small total capacitance : CT = 0.9pF (typ.)PinoutSpecifications...

HN1D04FU Data Sheet

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Part Number:
HN1D04FU
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

􀁺 ·Low forward voltage           : VF(3) = 0.90V (typ.)
􀁺 ·Fast reverse recovery time : trr = 1.6ns (typ.)
􀁺 ·Small total capacitance       : CT = 0.9pF (typ.)


Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300*
mA
Average forward current
IO
100*
mA
Surge current (10ms)
IFSM
2*
A
Power dissipation
P
200**
mW
Junction temperature
Tj
150
Storage temperature
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*: Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per
diode are 50% of those of the single diode.
** : Total rating




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