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HN1D01FU

Application· Small package· Low forward voltage : VF (3) = 0.92V (typ.)· Fast reverse recovery time : trr = 1.6ns (typ.)· Small total capacitance : CT = 2.2pF (typ.)PinoutSpecifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltageReverse voltageMaximum (peak) forward...

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HN1D01FU: Application· Small package· Low forward voltage : VF (3) = 0.92V (typ.)· Fast reverse recovery time : trr = 1.6ns (typ.)· Small total capacitance : CT = 2.2pF (typ.)PinoutSpecifications Charact...

HN1D01FU Data Sheet

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Part Number:
HN1D01FU
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Application

·  Small package
·  Low forward voltage : VF (3) = 0.92V (typ.)
·  Fast reverse recovery time : trr = 1.6ns (typ.)
·  Small total capacitance : CT = 2.2pF (typ.)


Pinout

Connection Diagram


Specifications

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current		 VRM

VR

IFM		 85

80

300*		 V

V

mA
Average forward current

Surge current (10ms)

Power dissipation		 IO

IFSM

P		 100*

2*

200		 mA

A

mW
Junction temperature

Storage temperature		 Tj

Tstg		 125

−55~125



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one.




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