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HN1D03FU

Application·Built in anode common and cathode common.Unit 1·Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.)·Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)·Small total capacitance Q1, Q2: CT = 0.9pF (typ.)Unit 2·Low forward voltage Q3, Q4: VF (3) = 0.92V (typ.)·Fast reverse recovery time Q...

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SeekIC No. : 004364940 Detail

HN1D03FU: Application·Built in anode common and cathode common.Unit 1·Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.)·Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)·Small total capacitance Q1, Q2: CT...

HN1D03FU Data Sheet

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HN1D03FU
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Product Details

Description



Application

·Built in anode common and cathode common.
Unit 1
·Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.)
·Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)
·Small total capacitance Q1, Q2: CT = 0.9pF (typ.)
Unit 2
·Low forward voltage Q3, Q4: VF (3) = 0.92V (typ.)
·Fast reverse recovery time Q3, Q4: trr = 1.6ns (typ.)
·Small total capacitance Q3, Q4: CT = 2.2pF (typ.)


Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
80*
mA
Surge current (10ms)
IFSM
2 *
A
Power dissipation
P*
200
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
-55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one.




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