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HN1D02FU

Features: HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.)Fast reverse recovery time : trr = 1.6ns (typ.)Small total capacitance : CT = 0.9pF (typ.)Specifications Parameter Symbol Limits Unit Maximum (peak) reverse Voltage VRM 85 ...

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HN1D02FU: Features: HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.)Fast reverse recovery time : trr = 1.6ns (typ.)Small total capacitance : CT = 0.9pF (typ.)Speci...

HN1D02FU Data Sheet

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Part Number:
HN1D02FU
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5000

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Product Details

Description



Features:

HN1D02FU is composed of 2 unit of cathode common.
Low forward voltage : VF (3) = 0.90V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)


Specifications

Parameter
Symbol
Limits
Unit
Maximum (peak) reverse Voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300*
mA
Average forward current
Io
100*
mA
Surge current (10ms)
IFSM
2*
mA
Power dissipation
P
200
mW
Junction temperature
Tj
125
Storage temperature
Tstg
−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability  est report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one.




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