Position: Home  > All Categories> Integrated Circuits (ICs) > HN1D02FU

HN1D02FU

Features: HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.)Fast reverse recovery time : trr = 1.6ns (typ.)Small total capacitance : CT = 0.9pF (typ.)Specifications Parameter Symbol Limits Unit Maximum (peak) reverse Voltage VRM 85 ...

product image

HN1D02FU Picture
See larger image
SeekIC No. : 004364938 Detail

HN1D02FU: Features: HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.)Fast reverse recovery time : trr = 1.6ns (typ.)Small total capacitance : CT = 0.9pF (typ.)Speci...

HN1D02FU Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
HN1D02FU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

HN1D02FU is composed of 2 unit of cathode common.
Low forward voltage : VF (3) = 0.90V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)


Specifications

Parameter
Symbol
Limits
Unit
Maximum (peak) reverse Voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300*
mA
Average forward current
Io
100*
mA
Surge current (10ms)
IFSM
2*
mA
Power dissipation
P
200
mW
Junction temperature
Tj
125
Storage temperature
Tstg
−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability  est report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Kits
IT243
UVSC-110-4E1
RF and RFID
X3C26P1-30S
1P620S
Audio Products
HUC1002
WM-64CT
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more