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HN1D02FE

Application·The HN1D02FU is composed of 2 common cathode units.·Low forward voltage : VF (3) = 0.90V (typ.)·Fast reverse recovery time : trr = 1.6ns (typ.)·Small total capacitance: CT = 0.9pF (typ.)Specifications Characteristic Symbol Rating Unit Maximum (peak) reverse voltage ...

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HN1D02FE: Application·The HN1D02FU is composed of 2 common cathode units.·Low forward voltage : VF (3) = 0.90V (typ.)·Fast reverse recovery time : trr = 1.6ns (typ.)·Small total capacitance: CT = 0.9pF (typ.)...

HN1D02FE Data Sheet

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HN1D02FE
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5000

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Product Details

Description



Application

·The HN1D02FU is composed of 2 common cathode units.
·Low forward voltage          : VF (3) = 0.90V (typ.)
·Fast reverse recovery time : trr = 1.6ns (typ.)
·Small total capacitance           : CT = 0.9pF (typ.)


Specifications

Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300*
mA
Average forward current
IO
100*
mA
Surge current (10ms)
IFSM
2*
A
Power dissipation
P
100**
mW
Junction temperature
Tj
150
Storage temperature
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4). Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those for a single diode.
**: Total rating.




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