HN1B04FE

Q1
Collector-base voltage V_CBO .............60 V
Collector-emitter voltage V_CEO......... 50 V
Emitter-base voltage V_EBO................. 5 V
Collector current I_C ......................150 mA
Base current I_B ..............................30 mA
Q2
Collector-base voltage V_CBO .........−50 V
Collector-emitter voltage V_CEO .....−50 V
Emitter-base voltage V_EBO .............−5 V
Collector current I_C ..................−150 mA
Base current I_B ..........................−30 mA
Q1, Q2 Common
Collector power dissipation P_C*....100 mW
Junction temperature T_j .......................150
Storage temperature range T_stg ...−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Total rating