HN1B01FDW1T1

Transistors Bipolar (BJT) 200mA 60V Dual

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SeekIC No. : 00214372 Detail

HN1B01FDW1T1: Transistors Bipolar (BJT) 200mA 60V Dual

floor Price/Ceiling Price

Part Number:
HN1B01FDW1T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN, PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 200 at 2 mA at 6 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-74 Packaging : Reel    

Description

Maximum Operating Frequency :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Configuration : Dual
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 0.2 A
Transistor Polarity : NPN, PNP
DC Collector/Base Gain hfe Min : 200 at 2 mA at 6 V
Package / Case : SC-74


Features:

• High Voltage and High Current: VCEO = 50 V, I C = 200 mA
• High hFE: hFE = 200~400
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: 3A
                     − Machine Model: C
• Pb−Free Package is Available



Pinout

  Connection Diagram


Specifications

Rating
Symbol
Rating
Unit
Collector−Base Voltage
V(BR)CBO
60
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current − Continuous
IC
200
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (notnormal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.


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