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HN1B01FDW1T1G

Transistors Bipolar (BJT) 200mA 60V Dual Complementary

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SeekIC No. : 00203895 Detail

HN1B01FDW1T1G: Transistors Bipolar (BJT) 200mA 60V Dual Complementary

HN1B01FDW1T1G Data Sheet

floor Price/Ceiling Price

US $ .07~.14 / Piece | Get Latest Price
Part Number:
HN1B01FDW1T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.14
  • $.13
  • $.09
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : NPN, PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 200 at 2 mA at 6 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-74 Packaging : Reel    

Description

Maximum Operating Frequency :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Configuration : Dual
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 0.2 A
Transistor Polarity : NPN, PNP
DC Collector/Base Gain hfe Min : 200 at 2 mA at 6 V
Package / Case : SC-74


Parameters:

Technical/Catalog InformationHN1B01FDW1T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN + PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)200mA
Power - Max380mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Vce Saturation (Max) @ Ib, Ic300mV, 250mV @ 10mA, 100mA
Frequency - Transistion-
Current - Collector Cutoff (Max)1mA
Mounting TypeSurface Mount
Package / CaseSC-74
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HN1B01FDW1T1G
HN1B01FDW1T1G
HN1B01FDW1T1GOS ND
HN1B01FDW1T1GOSND
HN1B01FDW1T1GOS



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