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Application·High hFE: hFE(1) = 120~400·Low VCE(sat.) : VCE (sat) = 0.2 V (max.) (IC = 400 mA, IB = 8 mA)·Small Power Motor Driver Application. PinoutSpecifications Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage ...

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SeekIC No. : 004364922 Detail

HN1A02F: Application·High hFE: hFE(1) = 120~400·Low VCE(sat.) : VCE (sat) = 0.2 V (max.) (IC = 400 mA, IB = 8 mA)·Small Power Motor Driver Application. PinoutSpecifications Characteristics Symbol ...

HN1A02F Data Sheet

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Part Number:: HN1A02F
Supply Ability:: 5000

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Upload time: 2024/12/21

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Transistors Bipolar (BJT) VCEO -50V IC -150mA HFE 120 - 400 200mW

Product Details

Description

Application

·High h_FE: h_FE(1) = 120~400
·Low V_CE(sat.) : V_{CE (sat)} = 0.2 V (max.) (I_C = 400 mA, I_B = 8 mA)
·Small Power Motor Driver Application.

Pinout

Connection Diagram

Specifications

Characteristics	Symbol	Rating	Unit
Collector-base voltage	V_CBO	-15	V
Collector-emitter voltage	V_CEO	-15	V
Emitter-base voltage	V_EBO	-5	V
Collector current	I_C	-800	mA
Base current	I_B	-160	mA
Collector power dissipation	P_C*	300	mW
Junction temperature	T_j	150
Storage temperature range	T_stg	-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.

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HN1A02F

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