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Application·Small package (Dual type)·High voltage and high current : VCEO = −50V, IC = −150mA (max)·High hFE: hFE = 120~400·Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)Specifications Characteristic Symbol Rating Unit Collector-base...

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SeekIC No. : 004364920 Detail

HN1A01FE: Application·Small package (Dual type)·High voltage and high current : VCEO = −50V, IC = −150mA (max)·High hFE: hFE = 120~400·Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC =...

HN1A01FE Data Sheet

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Part Number:: HN1A01FE
Supply Ability:: 5000

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Upload time: 2024/12/21

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Features: ·Small package (dual type)·High voltage and high current: VCEO = −50 V, IC = ͨ...
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US $.03 - .05 / Piece

Transistors Bipolar (BJT) VCEO -50V IC -150mA HFE 120 - 400 200mW

Product Details

Description

Application

·Small package (Dual type)
·High voltage and high current
: V_CEO = −50V, I_C = −150mA (max)
·High h_FE: h_FE = 120~400
·Excellent hFE linearity
: h_FE (I_C = −0.1mA) / h_FE (I_C = −2mA) = 0.95 (typ.)

Specifications

Characteristic	Symbol	Rating	Unit
Collector-base voltage	V_CBO	-50	V
Collector-emitter voltage	V_CEO	-50	V
Emitter-base voltage	V_EBO	-5	V
Collector current	I_C	-150	mA
Base current	I_B	-30	mA
Collector power dissipation	P_C^*	100	mW
Junction temperature	T_j	150
Storage temperature range	T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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HN1A01FE

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