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HN1A01F

Features: ·Small package (dual type)·High voltage and high current: VCEO = −50 V, IC = −150 mA (max)·High hFE: hFE = 120~400·Excellent hFE linearity: hFE (IC = −0.1 mA) / hFE (IC = −2 mA) = 0.95 (typ.)Specifications Parameter Symbol Ratings UNIT Collector-base vo...

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HN1A01F: Features: ·Small package (dual type)·High voltage and high current: VCEO = −50 V, IC = −150 mA (max)·High hFE: hFE = 120~400·Excellent hFE linearity: hFE (IC = −0.1 mA) / hFE (IC =...

HN1A01F Data Sheet

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Part Number:
HN1A01F
Supply Ability:
5000

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Small package (dual type)
·High voltage and high current
: VCEO = −50 V, IC = −150 mA (max)
·High hFE: hFE = 120~400
·Excellent hFE linearity
: hFE (IC = −0.1 mA) / hFE (IC = −2 mA) = 0.95 (typ.)


Specifications

Parameter Symbol Ratings UNIT
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC -150 A
Base current IB -30 A
Power dissipation at TA=25 (a)
Linear derating factor		 PC 300 mW
Jumction temperature Tj 125
Storage temperature Tstg 65 to +150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating


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