HMS2M32Z16V

Features: Access times: 10, 12, 15, 17 and 20ns High-density 8MByte design High-reliability, high-speed design Single + 3.3V ±10% power supply Easy memory expansion /CE and /OE functions All inputs and outputs are LVTTL-compatible Industry-standard pinout FR4-PCB design Low profile 72-pinPart ide...

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SeekIC No. : 004364835 Detail

HMS2M32Z16V: Features: Access times: 10, 12, 15, 17 and 20ns High-density 8MByte design High-reliability, high-speed design Single + 3.3V ±10% power supply Easy memory expansion /CE and /OE functions All inputs...

floor Price/Ceiling Price

Part Number:
HMS2M32Z16V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Access times: 10, 12, 15, 17 and 20ns
High-density 8MByte design
High-reliability, high-speed design
Single + 3.3V ±10% power supply
Easy memory expansion /CE and /OE functions
All inputs and outputs are LVTTL-compatible
Industry-standard pinout
FR4-PCB design
Low profile 72-pin
Part identification
- HMS2M32M16V : SIMM Design, Gold Lead
- HMS2M32Z16V: ZIP Design, Solder Pin Lead
( The both are pin-to-pin compatible)





Specifications

PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to +4.6V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +4.6V
Power Dissipation
PD
16W
Storage Temperature
TSTG
-65 to +150
Operating Temperature
TA
0to +70





Description

The HMS2M32M16V/HMS2M32Z16V is a high-speed static random access memory (SRAM) module containing 2,097,152 words
organized in a x32-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72-pin, double-sided, FR4- printed circuit board.

PD0 to PD3 identify the module HMS2M32Z16V's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.

Data is written into the SRAM memory HMS2M32Z16V when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS2M32Z16V is designed as multiple power and ground pin. All module components may be wered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible.






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