Features: Access times : 10, 12 and 15, 55ns Low Power Dissipation High-density 1Mbyte design High-reliability, high-speed design Single + 5V ±0.5V power supplyEasy memory expansion /CE and /OE functions All inputs and outputs are TTL-compatible Industry-standard pinout FR4-PCB design Low profile ...
HMS25632J2: Features: Access times : 10, 12 and 15, 55ns Low Power Dissipation High-density 1Mbyte design High-reliability, high-speed design Single + 5V ±0.5V power supplyEasy memory expansion /CE and /OE func...
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Features: · Access times : 10, 12 ,15, and 70, 85, 100ns· Low Power Dissipation· High-density 1Mby...
PARAMETER |
SYMBOL |
RATING | |
Voltage on Any Pin Relative to Vss |
VIN,OUT |
-0.5V to +7.0V | |
Voltage on Vcc Supply Relative to Vss |
VCC |
-0.5V to +7.0V | |
Power Dissipation |
PD |
2W | |
Storage Temperature |
TSTG |
-65 to +150 | |
Operating Temperature | Commercial |
TA |
0to +70 |
Industrial |
TA |
-40 to +85 |
The HMS25632J2 is a high-speed static random access memory (SRAM) module containing 262,144 words organized in a x32-bit configuration. The module consists of two 256K x 16 SRAMs mounted on a 68-pin, double-sided, FR4-printed circuit board. The HMS25632J2 uses 31 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (/BS0~/BS3). Output enable (/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module HMS25632J2 is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.