HMS25632J2

Features: Access times : 10, 12 and 15, 55ns Low Power Dissipation High-density 1Mbyte design High-reliability, high-speed design Single + 5V ±0.5V power supplyEasy memory expansion /CE and /OE functions All inputs and outputs are TTL-compatible Industry-standard pinout FR4-PCB design Low profile ...

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SeekIC No. : 004364820 Detail

HMS25632J2: Features: Access times : 10, 12 and 15, 55ns Low Power Dissipation High-density 1Mbyte design High-reliability, high-speed design Single + 5V ±0.5V power supplyEasy memory expansion /CE and /OE func...

floor Price/Ceiling Price

Part Number:
HMS25632J2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Access times : 10, 12 and 15, 55ns
Low Power Dissipation
High-density 1Mbyte design
High-reliability, high-speed design
Single + 5V ±0.5V power supply
Easy memory expansion /CE and /OE functions
All inputs and outputs are TTL-compatible
Industry-standard pinout
FR4-PCB design
Low profile 68-pin JLCC





Pinout






Specifications

PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD
2W
Storage Temperature
TSTG
-65 to +150
Operating Temperature Commercial
TA
0to +70
Industrial
TA
-40 to +85





Description

The HMS25632J2 is a high-speed static random access memory (SRAM) module containing 262,144 words organized in a x32-bit configuration. The module consists of two 256K x 16 SRAMs mounted on a 68-pin, double-sided, FR4-printed circuit board. The HMS25632J2 uses 31 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (/BS0~/BS3). Output enable (/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module HMS25632J2 is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.






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