Features: Access times: 10, 12, 15, 17 and 20ns High-density 8MByte design High-reliability, high-speed design Single + 3.3V ±10% power supply Easy memory expansion /CE and /OE functions All inputs and outputs are LVTTL-compatible Industry-standard pinout FR4-PCB design Low profile 72-pinPart ide...
HMS2M32M16V: Features: Access times: 10, 12, 15, 17 and 20ns High-density 8MByte design High-reliability, high-speed design Single + 3.3V ±10% power supply Easy memory expansion /CE and /OE functions All inputs...
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Features: Access times : 10, 12 and 15, 55ns Low Power Dissipation High-density 1Mbyte design High...
PARAMETER |
SYMBOL |
RATING |
Voltage on Any Pin Relative to Vss |
VIN,OUT |
-0.5V to +4.6V |
Voltage on Vcc Supply Relative to Vss |
VCC |
-0.5V to +4.6V |
Power Dissipation |
PD |
16W |
Storage Temperature |
TSTG |
-65 to +150 |
Operating Temperature |
TA |
0to +70 |
The HMS2M32M16V/Z16V is a high-speed static random access memory (SRAM) module containing 2,097,152 words
organized in a x32-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72-pin, double-sided, FR4- printed circuit board.
PD0 to PD3 identify the module HMS2M32M16V's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output.
Data is written into the SRAM memory HMS2M32M16V when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module HMS2M32M16V is designed as multiple power and ground pin. All module components may be wered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible.