HMS25632M8B

` Access times : 8, 10,12, 15 and 20ns
` High-density 1MByte design
` High-reliability high-speed design
` Single + 5V ±0.5V power supply
` Easy memory expansion /CE and /OE functions
` All inputs and outputs are TTL-compatible
` Industry-standard pinout
` FR4-PCB design
` Part identification
- HMS25632M8B : 72-pin SIMM design
- HMS25632Z8B : 72-pin ZIP design
Pin-compatible with the HMS25632M8B

*Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

The HMS25632M8B is a high-speed static random access memory (SRAM) module containing 262,144 words organized in a x32-bit configuration. The module consists of eight 256K x 4 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board.

PD0 to PD3 identify the module HMS25632M8B's density allowing interchangeable use of alternate density, industry- standard modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output.

Data is written into the SRAM memory HMS25632M8B when write enable (/WE) and chip enable (/CE) inputs are both LOW.

About the HMS25632M8B ,reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS25632M8B is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.