HMN1M8DN

The HMN1M8DN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after V_CC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after V_CC returns valid.

The HMN1M8DN uses extremely low standby current CMOS SRAM's, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.